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The mismatch in lattice parameter between SiGe alloys and Si can lead to very high levels of elastic strain (ie stress). Growth of SiGe on Si mesa pads of small dimension can lead to significant relaxation of the stresses because the lateral constraint has been removed. We have used cross-correlation based analysis of EBSD patterns to determine the strain distribution and lattice rotation in such structures. All six components of the strain tensor and lattice rotations about all three axes are obtained, giving tremendous detail concerning the deformed state of the structure. |
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 normal strain e11 |
 normal strain e22 |
 normal strain e33 |
 shear strain e12 |
 shear strain e23 |
 shear strain e31 |
 rotation w12 |
 rotation w23 |
 rotation w31 |
 estimated error (rads) |
 cross correlation peak height |
Contact: Angus Wilkinson
Mapping strains at the nanoscale using electron back scatter diffraction AJ Wilkinson, G Meaden, DJ Dingley Superlattices and Microstructures, (2009), vol. 45, 285-294 doi:10.1016/j.spmi.2008.10.046 High resolution measurements of strain and tilt distributions in SiGe mesas using electron backscatter diffraction Wilkinson AJ Applied Physics Letters, (2006), vol. 89, 241910 doi:10.1063/1.2403904 |