25 nm thick In0.2Ga0.8As on GaAs
(cold cathode FEG SEM)


1 µm thick Si0.9Ge0.1 on Si
  (LaB6 SEM)

Electron channelling contrast imaging is an SEM based diffraction contrast imaging technique. We have used it to image and characterise misfit dislocations in SiGe/Si and InGaAs/GaAs systems over a wide range of epilayer misfit and thickness. Image widths depend on epilayer thickness. Care has to be taken with interpretation for thicker layers as surface relaxation of the dislocations strain fields plays a significant role.


Contact: Angus Wilkinson

Electron channelling contrast imaging of interfacial defects in strained silicon-germanium layers on silicon,
Wilkinson AJ, Anstis GR, Czernuszka JT, Long NJ, and Hirsch PB, Phil. Mag. A (1993), vol. 68, 59-80

The effects of surface stress-relaxation on electron channelling contrast images of dislocations,
Wilkinson AJ and Hirsch PB, Philosophical Magazine A (1995), vol. 72, 81-103

Observation of strain distributions in partially relaxed In0·2Ga0·8As on GaAs using electron channelling contrast imaging,
Wilkinson AJ , Phil. Mag. Lett. (1996), vol. 73, 337-344, doi:10.1080/095008396180605