Dr Kanad Mallik's Homepage

Publications

1. Fabrication of low loss coplanar waveguides on gold-doped Czochralski-silicon

By Abuelgasim, A.; Mallik, Kanad; Ashburn, P.; De Groot, C. H.
Proceedings of SPIE (2011), 8068(Bioelectronics, Biomedical. and Bioinspired Systems V; and Nanotechnology V), 806811/1-806811/12. Language: English, Database: CAPLUS, DOI:10.1117/12.886552

2. Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates

By Abuelgasim, A.; Mallik, K.; Ashburn, P.; Jordan, D. M.; Wilshaw, P. R.; Falster, R. J.; de Groot, C. H.
Semiconductor Science and Technology (2011), 26(7), 072001/1-072001/4. Language: English, Database: CAPLUS, DOI:10.1088/0268-1242/26/7/072001

3. Roll-to-roll manufacture of pentacene-based thin film transistors with a flash-evaporated polymer dielectric cured with an e-beam

By Abbas, Gamal A. W.; Cheng, Donna; Mallik, Kanad; Assender, Hazel E.
Materials Research Society Symposium Proceedings (2011), 1285(Challenges in Roll-to-Roll (R2R) Fabrication for Electronics and Other Functionalities), No pp. given. Language: English, Database: CAPLUS, DOI:10.1557/opl.2011.791

4. Self-aligned silicidation of surround gate vertical MOSFETs for low cost RF applications

By Hakim, M. M. A.; Tan, L.; Abuelgasim, A.; Mallik, K.; Connor, S.; Bousquet, A.; de Groot, C. H.; Redman-White, W.; Hall, S.; Ashburn, P.
IEEE Transactions on Electron Devices (2010), 57(12), 3318-3326. Language: English, Database: CAPLUS, DOI:10.1109/TED.2010.2082293

5. Semi-insulating silicon for microwave devices

By Jordan, D. M.; Mallik, Kanad; Falster, R. J.; Wilshaw, P. R.
Diffusion and Defect Data--Solid State Data, Pt. B: Solid State Phenomena (2010), 156-158(Gettering and Defect Engineering in Semiconductor Technology XIII), 101-106. Language: English, Database: CAPLUS, DOI:10.4028/www.scientific.net/SSP.156-158.101

6. The development of semi-insulating silicon substrates for microwave devices

By Jordan, D. M.; Haslam, R. H.; Mallik, Kanad; Falster, R. J.; Wilshaw, P. R.
Journal of the Electrochemical Society (2010), 157(5), H540-H545. Language: English, Database: CAPLUS, DOI:10.1149/1.3353822

7. The electrodeposition of copper   supercritical CO2/acetonitrile mixtures and   supercritical trifluoromethane

By Cook, David; Bartlett, Philip N.; Zhang, Wenjian; Levason, William; Reid, Gillian; Ke, Jie; Su, Wenta; George, Michael W.; Wilson, James; Smith, David; et al
Physical Chemistry Chemical Physics (2010), 12(37), 11744-11752. Language: English, Database: CAPLUS, DOI:10.1039/c004227g

8. A self-aligned silicidation technology for surround-gate vertical MOSFETS

By Hakim, M. M. A.; Mallik, K.; de-Groot, C. H.; Redman.-White, W.; Ashburn, P.; Tan, L.; Hall, S.
Proceedings of the European Solid-State Device Research Conference, 39th, Athens, Greece, Sept. 14-18, 2009 (2009), 363-366. Language: English, Database: CAPLUS

9. Continuous Flow Supercritical Chemical Fluid Deposition of Optoelectronic Quality CdS

By Yang, Jixin; Hyde, Jason R.; Wilson, James W.; Mallik, Kanad; Sazio, Pier J.; O'Brien, Paul; Malik, Mohamed A.; Afzaal, Mohammad; Nguyen, Chinh Q.; George, Michael W.; et al
Advanced Materials (Weinheim, Germany) (2009), 21(41), 4115-4119. Language: English, Database: CAPLUS, DOI:10.1002/adma.200803751

10. Electrodeposition of metals   supercritical fluids

By Ke, Jie; Su, Wenta; Howdle, Steven M.; George, Michael W.; Cook, David; Perdjon-Abel, Magda; Bartlett, Philip N.; Zhang, Wenjian; Cheng, Fei; Levason, William; et al
Proceedings of the National Academy of Sciences of the United States of America, Early Edition (2009), (Aug. 14 2009), 1-5, 5 pp.. Language: English, Database: CAPLUS, DOI:10.1073/pnas.0901986106

11. Electrodeposition of metals   supercritical fluids

By Ke, Jie; Su, Wenta; Howdle, Steven M.; George, Michael W.; Cook, David; Perdjon-Abel, Magda; Bartlett, Philip N.; Zhang, Wenjian; Cheng, Fei; Levason, William; et al
Proceedings of the National Academy of Sciences of the United States of America (2009), 106(35), 14768-14772, S14768/1-S14768/5. Language: English, Database: CAPLUS, DOI:10.1073/pnas.0901986106

12. Electrodeposition of metals   supercritical fluids

By Ke Jie; Su Wenta; Howdle Steven M; George Michael W; Cook David; Perdjon-Abel Magda; Bartlett Philip N; Zhang Wenjian; Cheng Fei; Levason William; et al
Proceedings of the National Academy of Sciences of the United States of America (2009), 106(35), 14768-72, English, Database: MEDLINE

13. Substrate for high frequency integrated circuit

By Wilshaw, Peter Richard; Mallik, Kanad; Falster, Robert James
PCT Int. Appl. (2009), WO 2009034362 A1 20090319, Language: English, Database: CAPLUS

14. Supercritical chemical fluid deposition of high quality compound semiconductors

By Afzaal, Mohammad; Aksomaityte, Gabriele; O'Brien, Paul; Cheng, Fei; George, Michael W.; Hector, Andrew L.; Howdle, Steven M.; Hyde, Jason R.; Levason, William; Malik, Mohamed A.; et al
ECS Transactions (2009), 25(8, EuroCVD 17/CVD 17), 1193-1197. Language: English, Database: CAPLUS, DOI:10.1149/1.3207724

15. The development of semi-insulating silicon substrates for microwave devices

By Jordan, D. M.; Haslam, R. H.; Mallik, Kanad; Wilshaw, P. R.
ECS Transactions (2008), 16(6), 41-56. Language: English, Database: CAPLUS, DOI:10.1149/1.2980291

16. Electron field emission   boron doped microcrystalline diamond

By Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H. J.; Peterlevitz, A. C.; Mallik, K.; Degasperi, F. T.
Applied Surface Science (2007), 253(18), 7381-7386. Language: English, Database: CAPLUS, DOI:10.1016/j.apsusc.2007.03.023

17. Enhancement of resistivity of Czochralski silicon by deep level manganese doping

By Mallik, Kanad; de Groot, C. H.; Ashburn, P.; Wilshaw, P. R.
Applied Physics Letters (2006), 89(11), 112122/1-112122/3. Language: English, Database: CAPLUS, DOI:10.1063/1.2349836

18. Semi-insulating Czochralski-silicon for radio frequency applications

By Mallik, Kanad; de Groot, C. H.; Ashburn, P.; Wilshaw, P. R.
ESSDERC 2006, Proceedings of the European Solid-State Device Research Conference, 36th, Montreux, Switzerland, Sept. 19-21, 2006 (2006), 435-438. Language: English, Database: CAPLUS

19. The structural and electrical properties of thermally grown TiO2 thin films

By Chong, Lit Ho; Mallik, Kanad; de Groot, C. H.; Kersting, Reinhard
Journal of Physics: Condensed Matter (2006), 18(2), 645-657. Language: English, Database: CAPLUS, DOI:10.1088/0953-8984/18/2/020

20. The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

By Chong, Lit-Ho; Mallik, Kanad; de Groot, C. H.
Microelectronic Engineering (2005), 81(2-4), 171-180. Language: English, Database: CAPLUS, DOI:10.1016/j.mee.2005.03.003

21. A room temperature cathodoluminescence study of dislocations in silicon

By Stowe, D. J.; Galloway, S. A.; Senkader, S.; Mallik, Kanad; Falster, R. J.; Wilshaw, P. R.
Institute of Physics Conference Series (2004), 179(Electron Microscopy and Analysis 2003), 67-70. Language: English, Database: CAPLUS

22. Schottky diode back contacts for high frequency capacitance studies on semiconductors

By Mallik, Kanad; Falster, R. J.; Wilshaw, P. R.
Solid-State Electronics (2004), 48(2), 231-238. Language: English, Database: CAPLUS, DOI:10.1016/S0038-1101(03)00315-0

23. "Semi-insulating" silicon using deep level impurity doping: Problems and potential

By Mallik, Kanad; Falster, R. J.; Wilshaw, P. R.
Semiconductor Science and Technology (2003), 18(6), 517-524. Language: English, Database: CAPLUS, DOI:10.1088/0268-1242/18/6/321

24. Fabrication of nanocrystalline aluminum islands using double-surface anodization

By Booth, S. E.; Marsh, C. D.; Mallik, Kanad; Baranauskas, V.; Sykes, J. M.; Wilshaw, P. R.
Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures--Processing, Measurement, and Phenomena (2003), 21(1), 316-318. Language: English, Database: CAPLUS, DOI:10.1116/1.1532025

25. Near-band gap luminescence at room temperature   dislocations in silicon

By Stowe, D. J.; Galloway, S. A.; Senkader, S.; Mallik, Kanad; Falster, R. J.; Wilshaw, P. R.
Physica B: Condensed Matter (Amsterdam, Netherlands) (2003), 340-342, 710-713. Language: English, Database: CAPLUS, DOI:10.1016/j.physb.2003.09.155

26. Variation of bandgap with oxygen ambient pressure in MgxZn1-xO thin films grown by pulsed laser deposition

By Misra, P.; Bhattacharya, P.; Mallik, K.; Rajagopalan, S.; Kukreja, L. M.; Rustagi, K. C.
Solid State Communications (2001), 117(11), 673-677. Language: English, Database: CAPLUS, DOI:10.1016/S0038-1098(01)00012-6

28. Nonuniform doping of the collector in avalanche transistors to improve the performance of Marx bank circuits

By Mallik, Kanad
Review of Scientific Instruments (2000), 71(4), 1853-1861. Language: English, Database: CAPLUS, DOI:10.1063/1.1150547

29. The theory of operation of transistorized Marx bank circuits

By Mallik, Kanad
Review of Scientific Instruments (1999), 70(4), 2155-2160. Language: English, Database: CAPLUS, DOI:10.1063/1.1149729

30. Optical absorption spectra of lead iodide nanoclusters

By Mallik, Kanad; Dhami, T. S.
Physical Review B: Condensed Matter and Materials Physics (1998), 58(19), 13055-13059. Language: English, Database: CAPLUS

31. Reflectivity of cadmium sulfide nanocrystal films grown by the Langmuir-Blodgett technique

By Roy, U. N.; Mallik, K.; Kukreja, L. M.
Applied Physics A: Materials Science & Processing (1998), 67(2), 259-261. Language: English, Database: CAPLUS, DOI:10.1007/s003390050768

32. The principle of operation of the avalanche transistor-based Marx bank circuit: A new perspective

By Chatterjee, Amitabh; Mallik, Kanad; Oak, S. M.
Review of Scientific Instruments (1998), 69(5), 2166-2170. Language: English, Database: CAPLUS, DOI:10.1063/1.1148917

35. Electron traps in GaAs:Sb grown by liquid phase epitaxy

By Dhar, S.; Mallik, Kanad; Mazumdar, Mousumi
Journal of Applied Physics (1995), 77(4), 1531-5. Language: English, Database: CAPLUS, DOI:10.1063/1.358904

36. A photoluminescence and photocapacitance study of GaAs:IN and GaAS:Sb layers grown by liquid-phase epitaxy

By Mallik, Kanad; Dhar, S.; Sinha, S.
Semiconductor Science and Technology (1994), 9(9), 1649-53. Language: English, Database: CAPLUS, DOI:10.1088/0268-1242/9/9/012

37. Dominant traps in liquid phase epitaxial GaAs studied by controlled doping with indium and antimony

By Mallik, K.; Dhar, S.
Physica Status Solidi B:  Basic Research (1994), 184(2), 393-402. Language: English, Database: CAPLUS, DOI:10.1002/pssb.2221840213

38. Electron traps in LPE GaAs:Sb, produced by high temperature annealing

By Dhar, S.; Mallik, Kanad; Mazumdar, Mousumi
Emerging Optoelectron. Technol., Proc. Conf., 2nd (1994), 54-7. Language: English, Database: CAPLUS

39. Growth and characterization of high quality strained gallium arsenide epitaxial layers

By Dhar, S.; Mallik, Kanad
Proceedings of SPIE-The International Society for Optical Engineering (1992), 1622(Emerging Optoelectron. Technol.), 73-6. Language: English, Database: CAPLUS

40. Characteristics of indium-doped gallium arsenide layers grown by liquid phase epitaxy with indium content in the range (0.3-7) × 1019 cm-3

By Dhar, S.; Mallik, Kanad; Nag, B. R.
Journal of Applied Physics (1991), 69(6), 3578-82. Language: English, Database: CAPLUS, DOI:10.1063/1.348500